MOS晶体管没有导电沟道为什么还会有电流As the value of the drain-source voltage is further increased,the assumption that the channel voltage is larger than the threshold all along the channel ceases to hold.This happens when VGS - V(x)

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MOS晶体管没有导电沟道为什么还会有电流As the value of the drain-source voltage is further increased,the assumption that the channel voltage is larger than the threshold all along the channel ceases to hold.This happens when VGS - V(x)
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MOS晶体管没有导电沟道为什么还会有电流As the value of the drain-source voltage is further increased,the assumption that the channel voltage is larger than the threshold all along the channel ceases to hold.This happens when VGS - V(x)
MOS晶体管没有导电沟道为什么还会有电流
As the value of the drain-source voltage is further increased,the assumption that the channel voltage is larger than the threshold all along the channel ceases to hold.This happens when VGS - V(x) < VT.At that point,the induced charge is zero,and the conducting channel disappears or is pinched off.No channel exists in the vicinity of the drain region and the current ID remains constant (or saturates).Please explain why the current can keep constant instead of being zero while the conducting channel has already disappeared?

MOS晶体管没有导电沟道为什么还会有电流As the value of the drain-source voltage is further increased,the assumption that the channel voltage is larger than the threshold all along the channel ceases to hold.This happens when VGS - V(x)
漏源电压的增大有两个影响,一个是使漏源间电流增大,另一个是使导电沟道沿漏源方向逐渐消失.这两种作用相互抵消,电流既不增大也不减小.当漏源电压大到一定程度,导电沟到会完全消失,但电流是有的,仍然是刚发生夹断时的电流,理由见上述

MOS晶体管没有导电沟道为什么还会有电流As the value of the drain-source voltage is further increased,the assumption that the channel voltage is larger than the threshold all along the channel ceases to hold.This happens when VGS - V(x) 为什么晶体管(n沟道增强型mos)的vg超过vth,源极与漏极之间的基板就会形成薄导电层 为什么N沟道mos管要高电来才通 电子技术　MOS管的导电沟道为什么一端宽一端窄 数电中N沟道增强型MOS管为防止有电流从衬底流向流向源极和导电沟道,通常将衬底与源极相连接不是防止有电流从衬底流向流向源极,为什么还将衬底与源极相连接? MOS管特性,包括电流流向,沟道开启条件 关于在绝缘栅型场效应管中N 沟道增强型 MOS N 沟道增强型 MOS 场效应管中UDS > UGS – UT,UGD < UT时由于夹断区的沟道电阻很大,UDS 逐渐增大时,为什么导电沟道两端电压基本不变,ID 因而基本不变? 该如何理解“ mos管是多子参与导电,少子不参与导电的晶体管 我举个例子,比如nmos 它是p衬底 所以多子是空穴 电子是少子.可是沟道类型却是n型 即电子形成的沟道 可对p型衬底 电子是少子啊? N沟道mos管源极电流可以向漏极流吗?N沟道mos管源极S电流可以向漏极D流吗?（正常时是漏极D电流向源极S流)不知道有没有某种情况会反着流,如电源里的同步整流用MOS（IRF907Z）,请高人详细讲解! n沟道mos管,为什么电流必须从D进入从s流出?看上去D和S不一样么?…… MOS管怎么区分N沟道和P沟道呢? 怎么判断MOS管是N沟道还是P沟道? 怎么判断MOS管是N沟道还是P沟道? 比如说N沟道增强型MOS管,电流从漏极到源极,是不是电流只经过沟道而不经过衬底,还有连接在衬底和源极...比如说N沟道增强型MOS管,电流从漏极到源极,是不是电流只经过沟道而不经过衬底,还 n沟道mos管有哪些 功率场效应管P沟道MOS管和N沟道MOS管的区别? P沟道增强型MOS管与N沟道耗尽型MOS管区别? N沟道增强型MOS管与P沟道增强型MOS管主要区别是什么?