英语翻译半导体激光器又称激光二极管(LD).进入八十年代,人们吸收了半导体物理发展的最新成果,采用了量子阱(QW)和应变量子阱(SL-QW)等新颖性结构,引进了折射率调制Bragg发射器以及增强调制B

英语翻译半导体激光器又称激光二极管(LD).进入八十年代,人们吸收了半导体物理发展的最新成果,采用了量子阱(QW)和应变量子阱(SL-QW)等新颖性结构,引进了折射率调制Bragg发射器以及增强调制B
英语翻译
半导体激光器又称激光二极管(LD).进入八十年代,人们吸收了半导体物理发展的最新成果,采用了量子阱(QW)和应变量子阱(SL-QW)等新颖性结构,引进了折射率调制Bragg发射器以及增强调制Bragg发射器最新技术,同时还发展了MBE、MOCVD及CBE等晶体生长技术新工艺,使得新的外延生长工艺能够精确地控制晶体生长,达到原子层厚度的精度,生长出优质量子阱以及应变量子阱材料.于是,制作出的LD,其阈值电流显著下降,转换效率大幅度提高,输出功率成倍增长,使用寿命也明显加长.
A 小功率LD
用于信息技术领域的小功率LD发展极快.例如用于光纤通信及光交换系统的分布反馈(DFB)和动态单模LD、窄线宽可调谐DFB-LD、用于光盘等信息处理技术领域的可见光波长(如波长为670nm、650nm、630nm的红光到蓝绿光)LD、量子阱面发射激光器以及超短脉冲LD等都得到实质性发展.这些器件的发展特征是：单频窄线宽、高速率、可调谐以及短波长化和光电单片集成化等.
B 高功率LD
1983年,波长800nm的单个LD输出功率已超过100mW,到了1989年,0.1mm条宽的LD则达到3.7W的连续输出,而1cm线阵LD已达到76W输出,转换效率达39%.1992年,美国人又把指标提高到一个新水平：1cm线阵LD连续波输出功率达121W,转换效率为45%.现在,输出功率为120W、1500W、3kW等诸多高功率LD均已面世.高效率、高功率LD及其列阵的迅速发展也为全固化激光器,亦即半导体激光泵浦(LDP)的固体激光器的迅猛发展提供了强有力的条件.
近年来,为适应EDFA和EDFL等需要,波长980nm的大功率LD也有很大发展.最近配合光纤Bragg光栅作选频滤波,大幅度改善其输出稳定性,泵浦效率也得到有效提高.
特点及应用范围：半导体二极管激光器是实用中最重要的一类激光器.它体积小、寿命长,并可采用简单的注入电流的方式来泵浦其工作电压和电流与集成电路兼容,因而可与之单片集成.并且还可以用高达GHz的频率直接进行电流调制以获得高速调制的激光输出.由于这些优点,半导体二极管激光器在激光通信、光存储、光陀螺、激光打印、测距以及雷达等方面以及获得了广泛的应用.

英语翻译半导体激光器又称激光二极管(LD).进入八十年代,人们吸收了半导体物理发展的最新成果,采用了量子阱(QW)和应变量子阱(SL-QW)等新颖性结构,引进了折射率调制Bragg发射器以及增强调制B
Also known as laser diode laser diode (LD).Into the 1980s,it absorbed the physical development of the semiconductor up-to-date results,the use of quantum well (QW) and strained quantum well (SL-QW) structures,such as novelty,the introduction of the refractive index modulation Bragg launchers,as well as to enhance Bragg modulation transmitter The latest technology,as well as the development of the MBE,MOCVD and the CBE,such as crystal growth technology of the new technology,making new epitaxial growth technology to precisely control crystal growth to the accuracy of atomic layer thick,high-quality growth of quantum wells,as well as strained quantum well materials.As a result,production of the LD,the current threshold of a significant decline in conversion efficiency has been greatly improved the power output doubled,significantly longer service life.
A low-power LD
In the field of information technology for the rapid development of low-power LD.For example,for fiber-optic communications and optical switching systems distributed feedback (DFB) and the dynamic single-mode LD,narrow linewidth tunable DFB-LD,such as CD-ROM for information processing technology in the field of visible light Wavelength (such as wavelength of 670nm,650nm,630nm The blue-green to red) LD,surface-emitting quantum well,as well as ultra-short laser pulses substantive,which are all treated the development of LD.The development of these devices are:narrow-linewidth single-frequency,high-speed,as well as short-wavelength tunable optical and integrated single-chip,and so on.
B high-power LD
In 1983,a single wavelength of 800nm output power LD more than 100mW,to 1989,0.1mm-wide LD be reached 3.7W continuous output,and 1cm linear array LD has reached 76W output,the conversion efficiency of 39%.In 1992,the Americans also targets to a new level:1cm linear array LD CW output power up to 121W,the conversion efficiency of 45%.Now,the output power of 120W,1500W,3kW and many other high-power LD have been published.High-efficiency,high power LD array and its rapid development for all-solid-state laser,diode laser that is pumped (LDP) of the rapid development of solid-state laser provides strong.
In recent years,in order to adapt to the EDFA and the EDFL,and other needs of the wavelength of 980nm high-power LD is that there is great development.Fiber Bragg Grating with recently selected frequency for filtering,a significant improvement in the stability of its output,pump effectively improve the efficiency.
And the characteristics of the application:semiconductor diode laser is the most important practical for a class of lasers.Its small size,long life,and a simple injection of current-pumped his way to work with the voltage and current circuit-compatible,which can be integrated with a single.And also can be as high as GHz frequency modulation direct current for high-speed modulation of laser output.As a result of these advantages,the semiconductor diode laser in the laser communications,optical storage,optical gyros,laser printing,as well as radar range,and so on,as well as access to a wide range of applications.